EMB12P03G Datasheet, Transistor, Excelliance MOS

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Part number:

EMB12P03G

Manufacturer:

Excelliance MOS

File Size:

215.71kb

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📄 Datasheet

Description:

P-channel logic level enhancement mode field effect transistor.

TAGS

EMB12P03G

Excelliance MOS

📁 Related Datasheet

EMB12P03A - MOSFET (Excelliance MOS)
P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 12mΩ ID ‐45A G UIS, Rg 100% Tested.

EMB12P03H - P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 12mΩ ID ‐50A G UIS, Rg 100% Tested.

EMB12P03V - MOSFET (Excelliance MOS)
P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 12mΩ ID ‐21A G UIS, Rg 100% Tested.

EMB12P04A - MOSFET (Excelliance MOS)
P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 12.6mΩ ID ‐25A G UIS, Rg 100% Test.

EMB12P04F - Single P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMB12P04F Single P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS -40V RDSON (MAX.) 12.6m.

EMB12P04H - Single P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
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EMB12P04V - MOSFET (Excelliance MOS)
P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 12.6mΩ ID ‐22A G UIS, Rg 100% Test.

EMB12K03GP - MOSFET (Excelliance MOS)
    Dual Asymmetric N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:    N‐CH‐Q1  N‐CH‐Q2  BVDSS  30V  30V  RDSON .

EMB12K03V - MOSFET (Excelliance MOS)
    Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:    N‐CH‐Q1  N‐CH‐Q2  BVDSS  RDSON (MAX.)  30V  12mΩ  30.

EMB12N03A - MOSFET (Excelliance MOS)
EMB12N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 12mΩ ID 25A G UIS, Rg 10.