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EMB12P03G Datasheet - Excelliance MOS

EMB12P03G P-Channel Logic Level Enhancement Mode Field Effect Transistor

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.)(VGS=‐10V) 10mΩ ID ‐13A G P Channel MOSFET UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PIN1 PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 VGS ±25 TA = 25 °C ‐13 ID TA = 100 °C ‐8 IDM ‐52 Avalanche Current Avalanche Energy L = 0..

EMB12P03G Datasheet (215.71 KB)

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Datasheet Details

Part number:

EMB12P03G

Manufacturer:

Excelliance MOS

File Size:

215.71 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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EMB12P03G P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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