EMB12P04F Datasheet, Transistor, Excelliance MOS

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Part number:

EMB12P04F

Manufacturer:

Excelliance MOS

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353.98kb

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📄 Datasheet

Description:

Single p-channel logic level enhancement mode field effect transistor. BVDSS -40V RDSON (MAX.) 12.6mΩ ID -25A Single P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOL

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EMB12P04F

Excelliance MOS

📁 Related Datasheet

EMB12P04A - MOSFET (Excelliance MOS)
P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 12.6mΩ ID ‐25A G UIS, Rg 100% Test.

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 12.6mΩ ID ‐22A G UIS, Rg 100% Test.

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 12mΩ ID ‐45A G UIS, Rg 100% Tested.

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.)(VGS=‐10V) 10mΩ ID ‐13A G P Channel .

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 12mΩ ID ‐50A G UIS, Rg 100% Tested.

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 12mΩ ID ‐21A G UIS, Rg 100% Tested.

EMB12K03GP - MOSFET (Excelliance MOS)
    Dual Asymmetric N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:    N‐CH‐Q1  N‐CH‐Q2  BVDSS  30V  30V  RDSON .

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