Datasheet Details
| Part number | EMB12P04F |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 353.98 KB |
| Description | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
|
| Part number | EMB12P04F |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 353.98 KB |
| Description | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
|
BVDSS -40V RDSON (MAX.) 12.6mΩ ID -25A Single P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 VGS TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, ID=-25A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.05mH EAR Power Dissipation TC = 25 °C TC = 100 °C Operati
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