EMB12P04V Datasheet - Excelliance MOS

EMB12P04V MOSFET

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 12.6mΩ ID ‐22A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=‐18A, RG=25Ω L = 0.05mH Power Dissi.

EMB12P04V Datasheet (174.23 KB)

EMB12P04V Datasheet Preview — Preview of EMB12P04V PDF

Datasheet Details

Part number:

EMB12P04V

Manufacturer:

Excelliance MOS

File Size:

174.23 KB

Description:

Mosfet.

📁 Related Datasheet

EMB12P04A MOSFET (Excelliance MOS)

EMB12P04F Single P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB12P04H Single P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB12P03A MOSFET (Excelliance MOS)

EMB12P03G P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB12P03H P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB12P03V MOSFET (Excelliance MOS)

EMB12K03GP MOSFET (Excelliance MOS)

TAGS

EMB12P04V MOSFET Excelliance MOS

EMB12P04V Distributor