Datasheet4U Logo Datasheet4U.com

EMB12P03V Datasheet - Excelliance MOS

EMB12P03V MOSFET

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 12mΩ ID ‐21A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=‐13A, RG=25Ω L = 0.05mH Power Dissipa.

EMB12P03V Datasheet (192.83 KB)

Preview of EMB12P03V PDF

Datasheet Details

Part number:

EMB12P03V

Manufacturer:

Excelliance MOS

File Size:

192.83 KB

Description:

Mosfet.

📁 Related Datasheet

EMB12P03A MOSFET (Excelliance MOS)

EMB12P03G P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB12P03H P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB12P04A MOSFET (Excelliance MOS)

EMB12P04F Single P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB12P04H Single P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB12P04V MOSFET (Excelliance MOS)

EMB12K03GP MOSFET (Excelliance MOS)

EMB12K03V MOSFET (Excelliance MOS)

EMB12N03A MOSFET (Excelliance MOS)

TAGS

EMB12P03V MOSFET Excelliance MOS

Image Gallery

EMB12P03V Datasheet Preview Page 2 EMB12P03V Datasheet Preview Page 3

EMB12P03V Distributor