EMB14N10F Datasheet - Excelliance MOS

EMB14N10F MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 14.6mΩ ID 40A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=40A, RG=25Ω L = 0.05mH Power Dissipa.

EMB14N10F-ExcellianceMOS.pdf

EMB14N10F Datasheet Preview — Preview of EMB14N10F PDF

Datasheet Details

Part number:

EMB14N10F

Manufacturer:

Excelliance MOS

File Size:

230.81 KB

Description:

Mosfet.

📁 Related Datasheet

EMB14N10CS MOSFET (Excelliance MOS)

EMB14N10H MOSFET (Excelliance MOS)

EMB1412 EMB1412 MOSFET Gate Driver (Rev. B) (ETCTI)

EMB1428Q EMB1428Q Switch Matrix Gate Driver (Rev. A) (ETCTI)

EMB1432Q EMB1432Q 60-V 14-Channel Battery Stack Module Analog Front End (Rev. D) (ETCTI)

EMB1433Q EMB1433Q 60-V 14-Channel Battery Stack Protection Chip with Programmable Window Comparator Supports Multi-Module Battery Packs (Rev. B) (ETCTI)

EMB1499Q EMB1499Q Bidirectional Current DC-DC Controller (Rev. B) (ETCTI)

EMB14P03G P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

TAGS

EMB14N10F EMB14N10F MOSFET Excelliance MOS

EMB14N10F Distributor