EMB14P03V Datasheet - Excelliance MOS

EMB14P03V P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -30V RDSON (MAX.) 14mΩ ID -20A G PIN1 P Channel MOSFET UIS, Rg 100% Tested S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TA = 25 °C TC = 100 °C IDM Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 IAS L.

EMB14P03V Datasheet (164.16 KB)

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Datasheet Details

Part number:

EMB14P03V

Manufacturer:

Excelliance MOS

File Size:

164.16 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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EMB14P03V P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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