EMB12K03GP Datasheet - Excelliance MOS

EMB12K03GP MOSFET

Dual Asymmetric N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V RDSON (MAX.) 15.5mΩ 12.5mΩ ID 9A 10A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=10A, RG=25Ω Repetitive Avala.

EMB12K03GP-ExcellianceMOS.pdf