EMB20P03VAT-L Datasheet - Excelliance MOS

EMB20P03VAT-L P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB20P03VAT-L P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -30V RDSON (MAX.) 20mΩ ID -8.7A G Single P Channel MOSFET Rg 100% Tested S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Bottom View S D D S D G D D PIN 1 SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA = 70 °C IDM -8.7 -6.4 -34.

EMB20P03VAT-L-ExcellianceMOS.pdf