Part number:
EMB32A03G
Manufacturer:
Excelliance MOS
File Size:
190.72 KB
Description:
Dual n-channel logic level enhancement mode field effect transistor.
Datasheet Details
Part number:
EMB32A03G
Manufacturer:
Excelliance MOS
File Size:
190.72 KB
Description:
Dual n-channel logic level enhancement mode field effect transistor.
EMB32A03G, Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 32mΩ ID 6.5A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMB32A03G LIMITS ±20 6.5 5.5
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