EMB32A03G Datasheet - Excelliance MOS

EMB32A03G Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 32mΩ ID 6.5A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMB32A03G LIMITS ±20 6.5 5.5.

EMB32A03G-ExcellianceMOS.pdf