EMB32C03V Datasheet - Excelliance MOS

EMB32C03V N & P-Channel Logic Level Enhancement Mode Field Effect Transistor

N & P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH P-CH BVDSS 30V -30V RDSON (MAX.) @VGS=10V 32mΩ 55mΩ RDSON (MAX.) @VGS=4.5V 45mΩ 85mΩ ID@TA=25°C 6A -5A N+P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Aval.

EMB32C03V-ExcellianceMOS.pdf