EMB55N03JS
Excelliance MOS
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N-channel logic level enhancement mode field effect transistor.
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EMB55N03J - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
30V
RDSON (MAX.)
55mΩ
ID
3.5A
G
S Pb-Free Lead Plati.
EMB55N06G - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
55mΩ
ID
6A
G
UIS, Rg 100% Tested
S.
EMB55A03G - MOSFET
(Excelliance MOS)
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
55mΩ
ID
4.5A
UIS, 100% Tested Pb‐F.
EMB50B03G - MOSFET
(Excelliance MOS)
Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
RDSON (MAX.)
50mΩ
ID
‐5A
Pb‐Free Lead Plating .
EMB50B03V - MOSFET
(Excelliance MOS)
Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
RDSON (MAX.)
50mΩ
ID ‐5.5A
Pb.
EMB50D03G - MOSFET
(Excelliance MOS)
EMB50D03G
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH
P‐CH
BVDSS
30V
‐30V
RDSON (MAX.)
21mΩ 50mΩ.
EMB50N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
50mΩ
ID
25A
G
UIS, Rg 100% Tested
.
EMB50N10S - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
50mΩ
ID 8A
G
UIS, Rg .
EMB50P03G - MOSFET
(Excelliance MOS)
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐30V
RDSON (MAX.)
60mΩ
ID
‐6A
G
S Pb‐Free Lead Plati.
EMB50P03J - MOSFET
(Excelliance MOS)
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐30V
RDSON (MAX.)
50mΩ
ID
‐4.5A
G
S Pb‐Free Lead Pla.