EMBB0N10J, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
220mΩ
ID 1.4A G
UIS 10.
EMBB0N10V, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
220mΩ
ID 3A
G
UIS 100.
EMBB5N10P, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
280mΩ
ID
2.4A
G
UIS 100% Tested
S.
EMBB5N10Q, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
250mΩ
ID
3A
G
UIS 100% Tested
S
.