EMBB0P10A Datasheet - Excelliance MOS

EMBB0P10A P-Channel Logic Level Enhancement Mode Field Effect Transistor

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐100V RDSON (MAX.) 205mΩ ID ‐10A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=‐12A, RG=25Ω L = 0.05mH Power Dissi.

EMBB0P10A Datasheet (227.35 KB)