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EMP37N03H Datasheet - Excelliance MOS

EMP37N03H N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 3.7mΩ ID 78A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMP37N03H ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current TC = 25 °C TC = 100 °C TA = 25 °C Pulsed Drain Current1 TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH.

EMP37N03H-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMP37N03H

Manufacturer:

Excelliance MOS

File Size:

269.54 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMP37N03H EMP37N03H N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS