EMP37N03H Datasheet (Excelliance MOS) - N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMP37N03H, N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 3.7mΩ ID 78A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMP37N03H ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current TC = 25 °C TC = 100 °C TA = 25 °C Pulsed Drain Current1 TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH