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EMP16N04HS Datasheet - Excelliance MOS

EMP16N04HS MOSFET

EMP16N04HS N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 1.6mΩ ID 100A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C 100 ID TC = 100 °C 100 IDM 400 Avalanche Current IAS 85 Avalanche Energy L = 0.1mH, ID=85.

EMP16N04HS-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMP16N04HS

Manufacturer:

Excelliance MOS

File Size:

211.67 KB

Description:

Mosfet.

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