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FKN0014 N-Channel MOSFET

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Description

FETek Technology Corp.* Green Device Available * Super Low Gate Charge * Excellent Cdv/dt effect decline * Advanced high cell density.
The FKN0014 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter a.

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Datasheet Specifications

Part number
FKN0014
Manufacturer
FETek
File Size
522.96 KB
Datasheet
FKN0014-FETek.pdf
Description
N-Channel MOSFET

Applications

* The FKN0014 meet the RoHS and Green Product requirement with full function reliability approved. SOT23 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Cont

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