FNK4620 - Complementary Enhancement Mode Field Effect Transistor

Datasheet Details

Part number	FNK4620
Manufacturer	FNK
File Size	1.42 MB
Description	Complementary Enhancement Mode Field Effect Transistor
Datasheet	FNK4620-FNK.pdf

The FNK4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 21mΩ (VGS=10V) < 27mΩ (VGS=4.5V) p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 30mΩ (VGS = -10V) < 44mΩ (VGS = -4.5V) Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 D1 D1 D2 G2 S2 n-channel D1 G1 S1 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current F TA=70°C Pulsed Drain Current B ID IDM 7.2 6.

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Published: Mar 23, 2018 |