* Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 8A ID(Tc=100℃) 4.6 A IDM 30 A VGSS ±30 V EAS 230 mJ EAR 10 mJ IAR 7.5 A PD(Tc=25℃) 48 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symb
CS8N60
FOSHAN BLUE ROCKET
232.24 KB
N-channel mosfet.
BR8N60(CS8N60)
N-Channel MOSFET/N MOS
: DC/DC 。
Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch m.
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