CS8N65A0H Datasheet - Huajing Microelectronics

CS8N65A0H Silicon N-Channel Power MOSFET

CS8N65 A0H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an.

CS8N65A0H Features

* l Fast Switching l Low ON Resistance(Rdson≤1.3Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:14pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramet

CS8N65A0H-HuajingMicroelectronics.pdf