CS8N65FA9H Datasheet, Mosfet, HUAJING MICROELECTRONICS

CS8N65FA9H Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤1.3Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:14pF) l 100% Single Pulse avalanche energy Test Appli

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CS8N65FA9H

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HUAJING MICROELECTRONICS

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS8N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduct

CS8N65FA9H Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Vo

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CS8N65FA9H

HUAJING MICROELECTRONICS

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