CS8N65A8H Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

Description

Silicon N-Channel Power MOSFET CS8N65 A8H ○R General .
CS8N65 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

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Datasheet Specifications

Part number: CS8N65A8H
Manufacturer: HUAJING MICROELECTRONICS
File Size: 347.14 KB
Datasheet: CS8N65A8H-HUAJINGMICROELECTRONICS.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single P

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CS8N65A8H Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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