CS8N60FA9D Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

Description

Silicon N-Channel Power MOSFET CS8N60F A9D ○R General .
CS8N60F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

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Datasheet Specifications

Part number: CS8N60FA9D
Manufacturer: HUAJING MICROELECTRONICS
File Size: 329.75 KB
Datasheet: CS8N60FA9D-HUAJINGMICROELECTRONICS.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage

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📁 Related Datasheet

CS8N60F CS8N60 CS8N60A8D CS8N60ARD CS8N65A0H CS8N65A4R-G

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CS8N60FA9D Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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