Part number:
CS8N60FA9D
Manufacturer:
HUAJING MICROELECTRONICS
File Size:
329.75 KB
Description:
Silicon n-channel power mosfet.
CS8N60FA9D-HUAJINGMICROELECTRONICS.pdf
Datasheet Details
CS8N60F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization a
CS8N60FA9D Features
* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter
CS8N60FA9D-HUAJINGMICROELECTRONICS.pdf
Datasheet Details
CS8N60FA9D
HUAJING MICROELECTRONICS
329.75 KB
Silicon n-channel power mosfet.
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