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CS8N60ARD Silicon N-Channel Power MOSFET

CS8N60ARD Description

Silicon N-Channel Power MOSFET CS8N60 ARD ○R General .
CS8N60 ARD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

CS8N60ARD Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-

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Datasheet Details

Part number
CS8N60ARD
Manufacturer
Huajing Microelectronics
File Size
214.99 KB
Datasheet
CS8N60ARD-HuajingDiscreteDevices.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET Huajing Microelectronics
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