CS8N60ARD

Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS8N60ARD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS8N60ARD General Description

CS8N60 ARD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an.

CS8N60ARD Datasheet (214.99 KB)

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Datasheet Details

Part number:

CS8N60ARD

Manufacturer:

Huajing Microelectronics

File Size:

214.99 KB

Description:

Silicon n-channel power mosfet.

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CS8N60ARD Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS8N60ARD Features

CS8N60ARD General Description

Datasheet Details

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