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CS8N25A4H Datasheet - Huajing Microelectronics

CS8N25A4H Silicon N-Channel Power MOSFET

CS8N25 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 250 8 83 0.4 the avalanche energy. The transistor can be used in various power switch.

CS8N25A4H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.47Ω) l Low Gate Charge (Typical Data:12nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol P

CS8N25A4H-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS8N25A4H

Manufacturer:

Huajing Microelectronics

File Size:

639.15 KB

Description:

Silicon n-channel power mosfet.

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