CS8N05AEP-G Datasheet - CR Micro

CS8N05AEP-G Silicon N-Channel Power MOSFET

VDSS 45 V CS8N05 AEP-G,the silicon N-channel Enhanced VDMOSFETs, is ID 8 A obtained by advanced trench Technology which reduce the PD(TC=25℃) 3.1 W conduction loss, improve switching performance and RDS(ON)Typ (VGS=10V) 15 mΩ enhance the avalanche energy. The transistor can be used in.

CS8N05AEP-G Features

* l Fast Switching l Low ON Resistance (Rdson≤25mΩ) l Low Reverse transfer capacitances(Typical:71pF) l 100% Single Pulse avalanche energy Test l Halogen free Applications： Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID ID

CS8N05AEP-G-CRMicro.pdf