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CS8N25FA9R

Silicon N-Channel Power MOSFET

CS8N25FA9R Features

* Fast Switching

* Low ON Resistance(Rdson≤0.47Ω)

* Low Gate Charge (Typical Data: 12.8nC)

* Low Reverse transfer capacitances(Typical: 7.9pF)

* 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless

CS8N25FA9R General Description

VDSS 250 CS8N25F A9R, the silicon N-channel Enhanced ID 8 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 30 which reduce the conduction loss, improve switching RDS(ON)Typ 0.36 performance and enhance the avalanche energy. The transistor can be used in various p.

CS8N25FA9R Datasheet (741.41 KB)

Preview of CS8N25FA9R PDF

Datasheet Details

Part number:

CS8N25FA9R

Manufacturer:

CR Micro

File Size:

741.41 KB

Description:

Silicon n-channel power mosfet.

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CS8N25FA9R Silicon N-Channel Power MOSFET CR Micro

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