CS8N25FA9R Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS8N25F A9R General .
VDSS 250 CS8N25F A9R, the silicon N-channel Enhanced ID 8 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 30 which r.

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Datasheet Specifications

Part number: CS8N25FA9R
Manufacturer: CR Micro
File Size: 741.41 KB
Datasheet: CS8N25FA9R-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤0.47Ω)
* Low Gate Charge (Typical Data: 12.8nC)
* Low Reverse transfer capacitances(Typical: 7.9pF)

Applications

* Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 IAS a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Sour

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CS8N25FA9R Silicon N-Channel Power MOSFET CR Micro

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