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CS8N50FA9R Silicon N-Channel Power MOSFET

CS8N50FA9R Description

Silicon N-Channel Power MOSFET CS8N50F A9R ○R General .
CS8N50F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

CS8N50FA9R Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu

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Datasheet Details

Part number
CS8N50FA9R
Manufacturer
Huajing Microelectronics
File Size
274.39 KB
Datasheet
CS8N50FA9R-HuajingDiscreteDevices.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET Huajing Microelectronics
Huajing Microelectronics CS8N50FA9R-like datasheet