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CS8N25A8R Silicon N-Channel Power MOSFET

CS8N25A8R Description

Silicon N-Channel Power MOSFET ○R CS8N25 A8R General .
VDSS 250 CS8N25 A8R, the silicon N-channel Enhanced VDMOSFETs, ID 8 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃).

CS8N25A8R Features

* Fast Switching
* Low ON Resistance(Rdson≤0.47Ω)
* Low Gate Charge (Typical Data: 12.8nC)
* Low Reverse transfer capacitances(Typical: 7.9pF)

CS8N25A8R Applications

* Automotive、DC Motor Control and Class D Amplifier. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 IAS a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current Ga

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Datasheet Details

Part number
CS8N25A8R
Manufacturer
CR Micro
File Size
768.78 KB
Datasheet
CS8N25A8R-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
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