CS8N50A8R Datasheet - Huajing Microelectronics

CS8N50A8R - Silicon N-Channel Power MOSFET

CS8N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and high.

CS8N50A8R Features

* l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 8 100 0.7 l Low ON Resistance(Rdson≤0.9Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 2

CS8N50A8R-HuajingDiscreteDevices.pdf

CS8N50A8R Datasheet Preview — Preview of CS8N50A8R PDF

Datasheet Details

Part number:

CS8N50A8R

Manufacturer:

Huajing Microelectronics

File Size:

269.69 KB

Description:

Silicon n-channel power mosfet.

CS8N50A8R Distributor

📁 Related Datasheet

CS8N50A4R CS8N50FA9R CS8N05AEP-G CS8N25A3R CS8N25A4H CS8N25A4R

📌 All Tags

CS8N50A8R Silicon N-Channel Power MOSFET Huajing Microelectronics