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CS8N25A4R

Silicon N-Channel Power MOSFET

CS8N25A4R Features

* Fast Switching

* Low ON Resistance(Rdson≤0.47Ω)

* Low Gate Charge (Typical Data: 12.8nC)

* Low Reverse transfer capacitances(Typical: 7.9pF)

* 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless

CS8N25A4R General Description

VDSS 250 CS8N25 A4R, the silicon N-channel Enhanced VDMOSFETs, ID 8 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 75 the conduction loss, improve switching performance and RDS(ON)Typ 0.36 enhance the avalanche energy. The transistor can be used in various pow.

CS8N25A4R Datasheet (759.30 KB)

Preview of CS8N25A4R PDF

Datasheet Details

Part number:

CS8N25A4R

Manufacturer:

CR Micro

File Size:

759.30 KB

Description:

Silicon n-channel power mosfet.

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CS8N25A4R Silicon N-Channel Power MOSFET CR Micro

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