CS8N25A4R Datasheet - CR Micro

CS8N25A4R Silicon N-Channel Power MOSFET

VDSS 250 CS8N25 A4R, the silicon N-channel Enhanced VDMOSFETs, ID 8 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 75 the conduction loss, improve switching performance and RDS(ON)Typ 0.36 enhance the avalanche energy. The transistor can be used in various pow.

CS8N25A4R Features

* Fast Switching

* Low ON Resistance(Rdson≤0.47Ω)

* Low Gate Charge (Typical Data: 12.8nC)

* Low Reverse transfer capacitances(Typical: 7.9pF)

* 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless

CS8N25A4R Datasheet (759.30 KB)