CS8N25A4R - Silicon N-Channel Power MOSFET

CR Micro

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Datasheet Details

Part number	CS8N25A4R
Manufacturer	CR Micro
File Size	759.30 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS8N25A4R-CRMicro.pdf

CS8N25A4R Product details

Description

VDSS 250 CS8N25 A4R, the silicon N-channel Enhanced VDMOSFETs, ID 8 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 75 the conduction loss, improve switching performance and RDS(ON)Typ 0.36 enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-252, which accords with the RoHS standard.

Features

Fast Switching.
Low ON Resistance(Rdson≤0.47Ω).
Low Gate Charge (Typical Data: 12.8nC).
Low Reverse transfer capacitances(Typical: 7.9pF).
100% Single Pulse avalanche energy Test.

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Published: Dec 9, 2024 |