CS8N60FA9H - Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

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Datasheet Details

Part number	CS8N60FA9H
Manufacturer	HUAJING MICROELECTRONICS
File Size	351.97 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS8N60FA9H-HUAJINGMICROELECTRONICS.pdf

CS8N60FA9H Product details

Description

CS8N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 8 45 0.8 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤1.2Ω) l Low Gate Charge (Typical Data:29nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche energy Test.

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Published: Jan 27, 2016 |