CS8N60FA9H Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

Description

Silicon N-Channel Power MOSFET CS8N60F A9H ○R General .
CS8N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve sw.

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Datasheet Specifications

Part number: CS8N60FA9H
Manufacturer: HUAJING MICROELECTRONICS
File Size: 351.97 KB
Datasheet: CS8N60FA9H-HUAJINGMICROELECTRONICS.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-So

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📁 Related Datasheet

CS8N60F CS8N60 CS8N60A8D CS8N60ARD CS8N65A0H CS8N65A4R-G

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CS8N60FA9H Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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