3DA2396 - SILICON NPN TRANSISTOR

FOSHAN BLUE ROCKET

Datasheet Details

High DC current gain),low VCE(sat),large collector power dissipation,wide SOA. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 80 V VCEO 60 V VEBO 6.0 V IC 3.0 A ICP 6.0 A PC(Ta=25℃) 2.0 W PC(Tc=25℃) 30 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test condition IC=50μA IC=1.0mA IE=50μA VCB=80V IE=0 VEB=6.0V IC=0 VCE=4.0V IC=500mA IC=2.0A IB=0.05A IC=2.0A IB=0.05A VCE=5.

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Published: May 20, 2015 |