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TC2309 Datasheet - FUMAN ELECTRONICS

TC2309 30V high-density P-channel MOS transistor

D SHENZHEN FUMAN ELECTRONICS CO., LTD. TC2309(：S&CIC1053) 30V P MOS 、 30V P MOS RDS(ON)<53mΩ@VGS= -10V RDS(OFF)<65mΩ@VGS= -4.5V S1 S2 S3 G4 8D 7D 6D 5D 、 C、 SOP-8 、 （TA=25℃，） VDSS VGSS ID IDM IS TJ TSTG B（TA=25℃，） BVDSS VGS=0V, IDS=250uA IDSS VGS(th) IGSS VDS=-24V, VGS=0V TA=25℃ VDS=VGS, IDS=250uA VGS=±12V, VDS=0V RDS(ON) VGS=-10V, IDS=-0.5A VGS=-4.5V, IDS=-0.5A VGS=-2.5V, IDS=-0.5A VSD ISD=-1A,.

TC2309 Datasheet (97.22 KB)

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Datasheet Details

Part number:

TC2309

Manufacturer:

FUMAN ELECTRONICS

File Size:

97.22 KB

Description:

30v high-density p-channel mos transistor.

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TC2309 30V high-density P-channel MOS transistor FUMAN ELECTRONICS

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