FCH76N60N Datasheet, Mosfet, Fairchild Semiconductor

FCH76N60N Features

• Mosfet
• RDS(on) = 28 mΩ (Typ.) @ VGS = 10 V, ID = 38 A
• Ultra Low Gate Charge (Typ. Qg = 218 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF)

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Part number:

FCH76N60N

Manufacturer:

Fairchild Semiconductor

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573.06kb

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📄 Datasheet

Description:

Mosfet. The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep tre

FCH76N60N Application

• Applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D G D S TO-247 G S MOSFET Maximum Ra

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FCH76N60N

Fairchild Semiconductor

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