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FDAF59N30 N-Channel MOSFET

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Description

FDAF59N30 300V N-Channel MOSFET October 2006 FDAF59N30 300V N-Channel MOSFET .
TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Features

* 34A, 300V, RDS(on) = 0.056Ω @VGS = 10 V
* Low gate charge ( typical 77 nC)
* Low Crss ( typical 80 pF)
* Fast switching
* 100% avalanche tested

FDAF59N30 Distributors

📁 Related Datasheet

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