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FDAF62N28 N-Channel MOSFET

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Description

FDAF62N28 280V N-Channel MOSFET October 2006 FDAF62N28 280V N-Channel MOSFET .
TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Features

* 36A, 280V, RDS(on) = 0.051Ω @VGS = 10 V
* Low gate charge ( typical 77 nC)
* Low Crss ( typical 83 pF)
* Fast switching
* 100% avalanche tested

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