FDB2710 N-Channel MOSFET

Fairchild Semiconductor

Description

FDB2710 * N-Channel PowerTrench® MOSFET November 2013 FDB2710 N-Channel PowerTrench® MOSFET 250 V, 50 A, 42.5 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance whil.

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Datasheet Specifications

Part number: FDB2710
Manufacturer: Fairchild Semiconductor
File Size: 1.14 MB
Datasheet: FDB2710_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* RDS(on) = 36.3 mΩ ( Typ. )@ VGS = 10 V, ID = 25 A
* High Performance Trench Technology for Extremely Low RDS(on)
* Low Gate Charge

Applications

* Synchronous Rectification
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS VGS ID IDM EAS dv/dt PD Drain-Source Voltage Gate-Source vol

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FDB2710 N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDB2710-like datasheet