FDB2710 Datasheet, Mosfet, Fairchild Semiconductor

FDB2710 Features

• Mosfet
• RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
• High Performance Trench Technology for Extremely Low RDS(on)
• Low Gate Charge
• High Power and Curr

PDF File Details

Part number:

FDB2710

Manufacturer:

Fairchild Semiconductor

File Size:

1.14MB

Download:

📄 Datasheet

Description:

N-channel mosfet. This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-stat

FDB2710 Application

• Applications
• Synchronous Rectification
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies D D

TAGS

FDB2710

Fairchild Semiconductor

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