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FDD4685_F085 P-Channel PowerTrench MOSFET

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Description

FDD4685_F085 P-Channel PowerTrench® MOSFET FDD4685_F085 P-Channel PowerTrench® MOSFET -40V, -32A, 35mΩ .

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Features

* Typ rDS(on) = 23mΩ at VGS = -10V, ID = -8.4A
* Typ rDS(on) = 30mΩ at VGS = -4.5V, ID = -7A
* Typ Qg(TOT) = 19nC at VGS = -5V
* High performance trench technology for extremely low rDS(on)
* RoHS Compliant

Applications

* Inverter
* Power Supplies December 2010 ©2010 Fairchild Semiconductor Corporation FDD4685_F085 Rev. C 1 www. fairchildsemi. com FDD4685_F085 P-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Vo

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