Datasheet4U Logo Datasheet4U.com

FDMB3800N Datasheet - Fairchild Semiconductor

FDMB3800N Dual N-Channel PowerTrench MOSFET

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered appli.

FDMB3800N Features

* RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 4.5 V

* Fast switching speed

* Low gate charge

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability.

* RoHS Compliant Absolute Maximum Rating

FDMB3800N Datasheet (355.54 KB)

Preview of FDMB3800N PDF
FDMB3800N Datasheet Preview Page 2 FDMB3800N Datasheet Preview Page 3

Datasheet Details

Part number:

FDMB3800N

Manufacturer:

Fairchild Semiconductor

File Size:

355.54 KB

Description:

Dual n-channel powertrench mosfet.

📁 Related Datasheet

FDMB3800N Dual N-Channel MOSFET (ON Semiconductor)

FDMB3900AN Dual N-Channel MOSFET (Fairchild Semiconductor)

FDMB2307NZ Dual Common Drain N-Channel MOSFET (Fairchild Semiconductor)

FDMB2307NZ Dual N-Channel MOSFET (ON Semiconductor)

FDMB2308PZ MOSFET (Fairchild Semiconductor)

FDMB2308PZ Dual P-Channel MOSFET (ON Semiconductor)

FDMB506P P-Channel 1.8V Logic Level PowerTrench MOSFET (Fairchild Semiconductor)

FDMB668P P-Channel 1.8V Logic Level PowerTrench MOSFET (Fairchild Semiconductor)

TAGS

FDMB3800N Dual N-Channel PowerTrench MOSFET Fairchild Semiconductor

FDMB3800N Distributor