FDMB3800N Datasheet - Fairchild Semiconductor

Dual N-Channel PowerTrench MOSFET

FDMB3800N Features

* RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 4.5 V

* Fast switching speed

* Low gate charge

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability.

* RoHS Compliant Absolute Maximum Rating

FDMB3800N General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered appli.

FDMB3800N Datasheet (355.54 KB)

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Datasheet Details

Part number:

FDMB3800N

Manufacturer:

Fairchild Semiconductor

File Size:

355.54 KB

Description:

Dual n-channel powertrench mosfet.

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FDMB3800N Dual N-Channel PowerTrench MOSFET Fairchild Semiconductor

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FDMB3800N Features

FDMB3800N General Description

Datasheet Details

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Description:

FDMB3800N Distributor