FDMB3800N - Dual N-Channel PowerTrench MOSFET

Fairchild Semiconductor

FDMB3800N Datasheet Preview — Preview of FDMB3800N PDF

Datasheet Details

Part number	FDMB3800N
Manufacturer	Fairchild ↗ Semiconductor
File Size	355.54 KB
Description	Dual N-Channel PowerTrench MOSFET
Datasheet	FDMB3800N_FairchildSemiconductor.pdf

FDMB3800N Product details

Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 4.5 V.
Fast switching speed.
Low gate charge.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
RoHS Compliant Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed Power dissipation for Single Operation Power dis.

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Published: May 3, 2007 |