FDMB3800N Dual N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDMB3800N Dual N-Channel PowerTrench® MOSFET January 2006 FDMB3800N Dual N-Channel PowerTrench® MOSFET 4.8A, 30V, 40mΩ General .
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to min.

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Datasheet Specifications

Part number: FDMB3800N
Manufacturer: Fairchild Semiconductor
File Size: 355.54 KB
Datasheet: FDMB3800N_FairchildSemiconductor.pdf
Description: Dual N-Channel PowerTrench MOSFET

Features

* RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 4.5 V
* Fast switching speed
* Low gate charge
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability.
* RoHS Compliant Absolute Maximum Rating

FDMB3800N Distributors

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FDMB3800N Dual N-Channel PowerTrench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMB3800N-like datasheet