FDMB2308PZ MOSFET

Fairchild Semiconductor

Description

FDMB2308PZ Dual Common Drain P-Channel PowerTrench® MOSFET FDMB2308PZ April 2014 Dual Common Drain P-Channel PowerTrench® MOSFET -20 V, -7 A, 36 mΩ.
This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications.

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Datasheet Specifications

Part number: FDMB2308PZ
Manufacturer: Fairchild Semiconductor
File Size: 269.03 KB
Datasheet: FDMB2308PZ-FairchildSemiconductor.pdf
Description: MOSFET

Features

* Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A
* Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A
* Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm
* HBM ESD protection level 2.8 kV (Note 3)

FDMB2308PZ Distributors

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FDMB2308PZ MOSFET Fairchild Semiconductor

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