Datasheet Details
| Part number | FDMB3900AN |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 244.39 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
 FDMB3900AN-FairchildSemiconductor.pdf
|
| Part number | FDMB3900AN |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 244.39 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
FDMB3900AN-FairchildSemiconductor.pdf
|
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A Fast switching speed These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Low gate charge High performance trench technology for extremely low rDS(on) High power and c
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