FDMB3900AN Dual N-Channel MOSFET

Fairchild Semiconductor

Description

FDMB3900AN Dual N-Channel PowerTrench® MOSFET FDMB3900AN Dual N-Channel PowerTrench® MOSFET 25 V, 7.0 A, 23 mΩ June 2013 .
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7. Max rDS(on) = 33 mΩ at VGS = 4. Fast switching speed Thes.

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Datasheet Specifications

Part number: FDMB3900AN
Manufacturer: Fairchild Semiconductor
File Size: 244.39 KB
Datasheet: FDMB3900AN-FairchildSemiconductor.pdf
Description: Dual N-Channel MOSFET

Applications

* where the low in-line power loss and fast switching are required.
* RoHS Compliant Pin 1 MicroFET 3X1.9 D2 5 D2 6 D1 7 D1 8 Q2 4 G2 3 S2 Q1 2 G1 1 S1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source

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FDMB3900AN Dual N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMB3900AN-like datasheet