* Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A
* Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A
* Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A
* Max rS1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A
* Low Profile - 0.8 mm maximum - in the new package MicroF
FDMB2307NZ Datasheet (357.44 KB)
FDMB2307NZ
Fairchild Semiconductor
357.44 KB
Dual common drain n-channel mosfet.
www.DataSheet.co.kr FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET 20 V, 9.7 .
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