FDMB2307NZ Datasheet, Mosfet, Fairchild Semiconductor

FDMB2307NZ Features

• Mosfet
• Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A
• Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A
• Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A

PDF File Details

Part number:

FDMB2307NZ

Manufacturer:

Fairchild Semiconductor

File Size:

357.44kb

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📄 Datasheet

Description:

Dual common drain n-channel mosfet. This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable

FDMB2307NZ Application

• Applications It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process

TAGS

FDMB2307NZ

Fairchild Semiconductor

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