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FDMC7696 - MOSFET

Description

Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s

Features

  • General.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC7696 N-Channel PowerTrench® MOSFET FDMC7696 N-Channel PowerTrench® MOSFET 30 V, 12 A, 11.5 mΩ January 2015 Features General Description „ Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
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