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FDMJ1028N N-Channel 2.5V Specified PowerTrench MOSFET

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Description

FDMJ1028N N-Channel 2.5V Specified PowerTrench® MOSFET June 2006 FDMJ1028N N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 3.2A, 90mΩ tm .
Max rDS(on) = 90mΩ at VGS = 4. Max rDS(on) = 130mΩ at VGS = 2. Low gate charge. High performance trench te.

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Datasheet Specifications

Part number
FDMJ1028N
Manufacturer
Fairchild Semiconductor
File Size
329.21 KB
Datasheet
FDMJ1028N-FairchildSemiconductor.pdf
Description
N-Channel 2.5V Specified PowerTrench MOSFET

Applications

* Applications
* Battery management
* Baseband Switches Bottom Drain Contact 43 52 61 Bottom Drain Contact MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Parameter PD Po

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