FDMJ1032C Datasheet - Fairchild Semiconductor

FDMJ1032C Dual N & P-Channel PowerTrench MOSFET

This dual N and P-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application * Battery management * RoH.

FDMJ1032C Features

* Q1: N-Channel

* Max rDS(on) = 90mΩ at VGS = 4.5V, ID = 3.2A

* Max rDS(on) = 130mΩ at VGS = 2.5V, ID = 2.5A Q2: P-Channel

* Max rDS(on) = 160mΩ at VGS = -4.5V, ID = -2.5A

* Max rDS(on) = 230mΩ at VGS = -2.5V, ID = -2.0A

* Max rDS(on) = 390mΩ at VGS = -1.8V, ID

FDMJ1032C Datasheet (370.38 KB)

FDMJ1032C Datasheet Preview — Preview of FDMJ1032C PDF

Datasheet Details

Part number:

FDMJ1032C

Manufacturer:

Fairchild Semiconductor

File Size:

370.38 KB

Description:

Dual n & p-channel powertrench mosfet.

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FDMJ1032C Dual P-Channel PowerTrench MOSFET Fairchild Semiconductor

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