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FDMJ1032C Dual N & P-Channel PowerTrench MOSFET

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Description

FDMJ1032C Dual N & P-Channel PowerTrench® MOSFET FDMJ1032C Dual N & P-Channel PowerTrench® MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, .
This dual N and P-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especi.

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Datasheet Specifications

Part number
FDMJ1032C
Manufacturer
Fairchild Semiconductor
File Size
370.38 KB
Datasheet
FDMJ1032C-FairchildSemiconductor.pdf
Description
Dual N & P-Channel PowerTrench MOSFET

Features

* Q1: N-Channel
* Max rDS(on) = 90mΩ at VGS = 4.5V, ID = 3.2A
* Max rDS(on) = 130mΩ at VGS = 2.5V, ID = 2.5A Q2: P-Channel
* Max rDS(on) = 160mΩ at VGS = -4.5V, ID = -2.5A
* Max rDS(on) = 230mΩ at VGS = -2.5V, ID = -2.0A
* Max rDS(on) = 390mΩ at VGS = -1.8V, ID

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