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FDMS86102LZ N-Channel MOSFET

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Description

FDMS86102LZ N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86102LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 22 A, 25 mΩ Fea.
Shielded Gate MOSFET Technology. Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A. Max rDS(on) = 37 mΩ at VGS = 4.

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Applications

* DC - DC Conversion
* Inverter
* Synchronous Rectifier Top Bottom Pin 1 S S D S S G S D Power 56 D D D D S D G D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Sourc

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N-Channel MOSFET Fairchild Semiconductor
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