Datasheet4U Logo Datasheet4U.com

FDMS86102LZ - N-Channel MOSFET

Description

Shielded Gate MOSFET Technology Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A HBM ESD protection level > 6 KV typical (Note 4) 100% UIL Tested RoHS Compliant This N-Channel logic Level MOSFETs

Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDMS86102LZ N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86102LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 22 A, 25 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A „ HBM ESD protection level > 6 KV typical (Note 4) „ 100% UIL Tested „ RoHS Compliant This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
Published: |