FDMS86102LZ - N-Channel MOSFET
* Shielded Gate MOSFET Technology * Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A * Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A * HBM ESD protection level > 6 KV typical (Note 4) * 100% UIL Tested * RoHS Compliant This N-Channel logic Level MOSFETs
