FDMS86102LZ Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A
- HBM ESD protection level > 6 KV typical (Note 4)
- 100% UIL Tested
- RoHS pliant
- Part: FDMS86102LZ
- Description: N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 349.75 KB
Related Fairchild Semiconductor Datasheets
| Part Number | Description |
|---|---|
| FDMS86101 | N-Channel MOSFET |
| FDMS86101A | N-Channel MOSFET |
| FDMS86101DC | N-Channel MOSFET |
| FDMS86103L | N-Channel MOSFET |
| FDMS86104 | N-Channel MOSFET |