Datasheet Details
| Part number | FDMS8670S |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 301.71 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDMS8670S Datasheet
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| Part number | FDMS8670S |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 301.71 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FDMS8670S Datasheet
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Max rDS(on) = 3.5m: at VGS = 10V, ID = 20A Max rDS(on) = 5.0m: at VGS = 4.5V, ID = 17A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design The FDMS8670S has been designed to minimize losses in power conversion application.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
This device has the added benefit of an efficient monolithic Schottky body diode.
FDMS8670S N-Channel PowerTrench® SyncFETTM October 2014 FDMS8670S N-Channel PowerTrench® SyncFETTM tm 30V, 42A, 3.
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|---|---|
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| FDMS8672AS | N-Channel MOSFET |
| FDMS8672S | N-Channel PowerTrench SyncFET |
| FDMS8674 | N-Channel MOSFET |
| FDMS86101 | N-Channel MOSFET |
| FDMS86101A | N-Channel MOSFET |
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| FDMS86103L | N-Channel MOSFET |