FDS4488 Datasheet (Fairchild Semiconductor)

FDS4488, N-Channel MOSFET

This N -Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low

FDS4488 Features

* 7.9 A, 30 V. RDS(ON) = 22 mΩ @ V GS = 10 V RDS(ON) = 30 mΩ @ V GS = 4.5 V

* Low gate charge (9.5 nC typical)

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability Applications

* DC/DC converter