FDS5170N7 Datasheet - Fairchild Semiconductor

FDS5170N7 60V N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. .

FDS5170N7 Features

* 10.6 A, 60 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 6.0 V

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability

* Fast switching, low gate charge (51nC typical)

* FLMP SO-8 package: Enhance

FDS5170N7-FairchildSemiconductor.pdf