FDS5682 N-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

FDS5682 N-Channel PowerTrench® MOSFET May 2008 FDS5682 N-Channel PowerTrench® MOSFET 60V, 7.5A, 21mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number: FDS5682
Manufacturer: Fairchild Semiconductor
File Size: 410.81 KB
Datasheet: FDS5682-FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

Features

* rDS(ON) = 21mΩ, VGS = 10V, ID = 7.5A
* rDS(ON) = 26.5mΩ, VGS = 4.5V, ID = 6.7A
* High performance trench technology for extremely low rDS(ON)

Applications

* DC/DC converters Branding Dash 1 2 3 4 SO-8 5 54 63 72 81 ©2008 Fairchild Semiconductor Corporation FDS5682 Rev. A1 1 www. fairchildsemi. com FDS5682 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source V

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FDS5682 N-Channel Power Trench MOSFET Fairchild Semiconductor

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